APA
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Hötger, A., Klein, J., Barthelmi, K., Sigl, L., Sigger, F., Männer W., … Holleitner, A. (2021). Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS2 van der Waals Heterodevices. Nano Letters.
Chicago/Turabian
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Hötger, A., J. Klein, K. Barthelmi, L. Sigl, F. Sigger, Männer W., S. Gyger, et al. “Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS2 Van Der Waals Heterodevices.” Nano letters (2021).
MLA
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Hötger, A., et al. “Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS2 Van Der Waals Heterodevices.” Nano Letters, 2021.
BibTeX Click to copy
@article{a2021a,
title = {Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS2 van der Waals Heterodevices.},
year = {2021},
journal = {Nano letters},
author = {Hötger, A. and Klein, J. and Barthelmi, K. and Sigl, L. and Sigger, F. and Männer, W. and Gyger, S. and Florian, M. and Lorke, M. and Jahnke, F. and Taniguchi, T. and Watanabe, Kenji and Jöns, K. and Wurstbauer, U. and Kastl, C. and Müller, K. and Finley, J. and Holleitner, A.}
}
We demonstrate electrostatic switching of individual, site-selectively generated matrices of single photon emitters (SPEs) in MoS2 van der Waals heterodevices. We contact monolayers of MoS2 in field-effect devices with graphene gates and hexagonal boron nitride as the dielectric and graphite as bottom gates. After the assembly of such gate-tunable heterodevices, we demonstrate how arrays of defects, that serve as quantum emitters, can be site-selectively generated in the monolayer MoS2 by focused helium ion irradiation. The SPEs are sensitive to the charge carrier concentration in the MoS2 and switch on and off similar to the neutral exciton in MoS2 for moderate electron doping. The demonstrated scheme is a first step for producing scalable, gate-addressable, and gate-switchable arrays of quantum light emitters in MoS2 heterostacks.
