Journal article
M. Bahmani, M. Faghihnasiri, M. Lorke, A. Kuc, T. Frauenheim
2019
2019
Semantic Scholar
Cite
Cite
APA
Click to copy
Bahmani, M., Faghihnasiri, M., Lorke, M., Kuc, A., & Frauenheim, T. (2019). Strain engineering of electronic properties of point defects inside MoS$_{2}$ monolayers from first-principles calculations.
Chicago/Turabian
Click to copy
Bahmani, M., M. Faghihnasiri, M. Lorke, A. Kuc, and T. Frauenheim. “Strain Engineering of Electronic Properties of Point Defects inside MoS$_{2}$ Monolayers from First-Principles Calculations” (2019).
MLA
Click to copy
Bahmani, M., et al. Strain Engineering of Electronic Properties of Point Defects inside MoS$_{2}$ Monolayers from First-Principles Calculations. 2019.
BibTeX Click to copy
@article{m2019a,
title = {Strain engineering of electronic properties of point defects inside MoS$_{2}$ monolayers from first-principles calculations},
year = {2019},
author = {Bahmani, M. and Faghihnasiri, M. and Lorke, M. and Kuc, A. and Frauenheim, T.}
}
Abstract
Monolayers of transition metal dichalcogenides are a set of two-dimensional materials with a stable semiconducting phase and direct-bandgap, showing promising applications in various electronic and optoelectronic devices. Monolayers of transition metal dichalcogenides have shown elastic relaxations up to an enormous fraction of their ideal strength while their electronic structure being very sensitive to the applied strain. Point vacancies in monolayers of such materials are present in all laboratory samples which affect in particular their electronic properties. These findings have paved the way for using strain and defect engineering in novel applications. The electronic structure and energetics of MoS2 monolayers containing point defects under strain are investigated by means of first-principles calculations based on density functional theory. Our results indicate that strain leads to strong modifications of the defect levels and their formation energies which are of importance for the application of these materials in real devices.
