Journal article
M. Lorke, S. Michael, Marian Cepok, F. Jahnke
Applied Physics Letters, 2018
Applied Physics Letters, 2018
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Lorke, M., Michael, S., Cepok, M., & Jahnke, F. (2018). Performance of quantum-dot-based tunnel-injection lasers: A theoretical analysis. Applied Physics Letters.
Chicago/Turabian
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Lorke, M., S. Michael, Marian Cepok, and F. Jahnke. “Performance of Quantum-Dot-Based Tunnel-Injection Lasers: A Theoretical Analysis.” Applied Physics Letters (2018).
MLA
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Lorke, M., et al. “Performance of Quantum-Dot-Based Tunnel-Injection Lasers: A Theoretical Analysis.” Applied Physics Letters, 2018.
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@article{m2018a,
title = {Performance of quantum-dot-based tunnel-injection lasers: A theoretical analysis},
year = {2018},
journal = {Applied Physics Letters},
author = {Lorke, M. and Michael, S. and Cepok, Marian and Jahnke, F.}
}
Abstract
Tunnel-injection lasers promise advantages in the modulation bandwidth and temperature stability in comparison with conventional laser designs. In this paper, we present results of a microscopic theory for laser properties of tunnel-injection devices and a comparison with a conventional quantum-dot laser structure. In general, the modulation bandwidth of semiconductor lasers is affected by the steady-state occupations of electrons and holes via the presence of spectral hole burning. For tunnel-injection lasers with InGaAs quantum dot emitting at an telecom wavelength of 155 μm, we demonstrate that the absence of spectral hole burning favors this concept over conventional quantum-dot based lasers.Tunnel-injection lasers promise advantages in the modulation bandwidth and temperature stability in comparison with conventional laser designs. In this paper, we present results of a microscopic theory for laser properties of tunnel-injection devices and a comparison with a conventional quantum-dot laser structure. In general, the modulation bandwidth of semiconductor lasers is affected by the steady-state occupations of electrons and holes via the presence of spectral hole burning. For tunnel-injection lasers with InGaAs quantum dot emitting at an telecom wavelength of 155 μm, we demonstrate that the absence of spectral hole burning favors this concept over conventional quantum-dot based lasers.
