Carrier Dynamics in a 1.55 μm Tunneling Injection Quantum Dot Semiconductor Optical Amplifier


Journal article


I. Khanonkin, M. Lorke, S. Michael, A. K. Mishra, J. Reithmaier, F. Jahnke, G. Eisenstein
2018 IEEE International Semiconductor Laser Conference (ISLC), 2018

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APA   Click to copy
Khanonkin, I., Lorke, M., Michael, S., Mishra, A. K., Reithmaier, J., Jahnke, F., & Eisenstein, G. (2018). Carrier Dynamics in a 1.55 μm Tunneling Injection Quantum Dot Semiconductor Optical Amplifier. 2018 IEEE International Semiconductor Laser Conference (ISLC).


Chicago/Turabian   Click to copy
Khanonkin, I., M. Lorke, S. Michael, A. K. Mishra, J. Reithmaier, F. Jahnke, and G. Eisenstein. “Carrier Dynamics in a 1.55 Μm Tunneling Injection Quantum Dot Semiconductor Optical Amplifier.” 2018 IEEE International Semiconductor Laser Conference (ISLC) (2018).


MLA   Click to copy
Khanonkin, I., et al. “Carrier Dynamics in a 1.55 Μm Tunneling Injection Quantum Dot Semiconductor Optical Amplifier.” 2018 IEEE International Semiconductor Laser Conference (ISLC), 2018.


BibTeX   Click to copy

@article{i2018a,
  title = {Carrier Dynamics in a 1.55 μm Tunneling Injection Quantum Dot Semiconductor Optical Amplifier},
  year = {2018},
  journal = {2018 IEEE International Semiconductor Laser Conference (ISLC)},
  author = {Khanonkin, I. and Lorke, M. and Michael, S. and Mishra, A. K. and Reithmaier, J. and Jahnke, F. and Eisenstein, G.}
}

Abstract

Carrier dynamics following a short pulse perturbation in a tunneling-injection quantum dot (QD) gain medium are analyzed. A hybrid state comprising the injection-well and QD first excited state dominate the dynamics with a time constant of 1ps. The role of the perturbation wavelength is discussed.





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