Journal article
2018 IEEE International Semiconductor Laser Conference (ISLC), 2018
APA
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Khanonkin, I., Lorke, M., Michael, S., Mishra, A. K., Reithmaier, J., Jahnke, F., & Eisenstein, G. (2018). Carrier Dynamics in a 1.55 μm Tunneling Injection Quantum Dot Semiconductor Optical Amplifier. 2018 IEEE International Semiconductor Laser Conference (ISLC).
Chicago/Turabian
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Khanonkin, I., M. Lorke, S. Michael, A. K. Mishra, J. Reithmaier, F. Jahnke, and G. Eisenstein. “Carrier Dynamics in a 1.55 Μm Tunneling Injection Quantum Dot Semiconductor Optical Amplifier.” 2018 IEEE International Semiconductor Laser Conference (ISLC) (2018).
MLA
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Khanonkin, I., et al. “Carrier Dynamics in a 1.55 Μm Tunneling Injection Quantum Dot Semiconductor Optical Amplifier.” 2018 IEEE International Semiconductor Laser Conference (ISLC), 2018.
BibTeX Click to copy
@article{i2018a,
title = {Carrier Dynamics in a 1.55 μm Tunneling Injection Quantum Dot Semiconductor Optical Amplifier},
year = {2018},
journal = {2018 IEEE International Semiconductor Laser Conference (ISLC)},
author = {Khanonkin, I. and Lorke, M. and Michael, S. and Mishra, A. K. and Reithmaier, J. and Jahnke, F. and Eisenstein, G.}
}
Carrier dynamics following a short pulse perturbation in a tunneling-injection quantum dot (QD) gain medium are analyzed. A hybrid state comprising the injection-well and QD first excited state dominate the dynamics with a time constant of 1ps. The role of the perturbation wavelength is discussed.