Journal article
A. Steinhoff, M. Florian, M. Lorke, M. Rösner, C. Gies, T. Wehling, F. Jahnke
2018
2018
Semantic Scholar
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Cite
APA
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Steinhoff, A., Florian, M., Lorke, M., Rösner, M., Gies, C., Wehling, T., & Jahnke, F. (2018). Excited-carrier effects in the optical properties of monolayer transition metal dichalcogenide semiconductors.
Chicago/Turabian
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Steinhoff, A., M. Florian, M. Lorke, M. Rösner, C. Gies, T. Wehling, and F. Jahnke. “Excited-Carrier Effects in the Optical Properties of Monolayer Transition Metal Dichalcogenide Semiconductors” (2018).
MLA
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Steinhoff, A., et al. Excited-Carrier Effects in the Optical Properties of Monolayer Transition Metal Dichalcogenide Semiconductors. 2018.
BibTeX Click to copy
@article{a2018a,
title = {Excited-carrier effects in the optical properties of monolayer transition metal dichalcogenide semiconductors},
year = {2018},
author = {Steinhoff, A. and Florian, M. and Lorke, M. and Rösner, M. and Gies, C. and Wehling, T. and Jahnke, F.}
}
Abstract
When electron-hole pairs are excited in a semiconductor, it is a priori not clear if subsequent relaxation leads to a gas of bound excitons or to an interacting plasma of unbound electrons and holes. Usually, the exciton phase is associated with low temperatures. In atomically thin transition metal dichalcogenide (TMDC) semiconductors, excitons are particularly important even at room temperature due to strong Coulomb interaction and a large exciton density of states.
