Journal article
R. Buschlinger, M. Lorke, U. Peschel
2014
2014
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APA
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Buschlinger, R., Lorke, M., & Peschel, U. (2014). Light-matter interaction and lasing in semiconductor nanowires: A combined finite-difference time-domain and semiconductor Bloch equation approach.
Chicago/Turabian
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Buschlinger, R., M. Lorke, and U. Peschel. “Light-Matter Interaction and Lasing in Semiconductor Nanowires: A Combined Finite-Difference Time-Domain and Semiconductor Bloch Equation Approach” (2014).
MLA
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Buschlinger, R., et al. Light-Matter Interaction and Lasing in Semiconductor Nanowires: A Combined Finite-Difference Time-Domain and Semiconductor Bloch Equation Approach. 2014.
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@article{r2014a,
title = {Light-matter interaction and lasing in semiconductor nanowires: A combined finite-difference time-domain and semiconductor Bloch equation approach},
year = {2014},
author = {Buschlinger, R. and Lorke, M. and Peschel, U.}
}
Abstract
We present a time-domain model for the simulation of light-matter interaction in semiconductors in arbitrary geometries and across a wide range of excitation conditions. The electromagnetic field is treated classically using the finite-difference time-domain method. The polarization and occupation numbers of the semiconductor material are described using the semiconductor Bloch equations including many-body effects in the screened Hartree-Fock approximation. Spontaneous emission noise is introduced using stochastic driving terms. As an application of the model, we present simulations of the dynamics of a nanowire laser including optical pumping, seeding by spontaneous emission and the selection of lasing modes.
