Two-Dimensional Heterojunctions from Nonlocal Manipulations of the Interactions.


Journal article


M. Rösner, C. Steinke, M. Lorke, C. Gies, F. Jahnke, T. Wehling
Nano letters, 2016

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APA   Click to copy
Rösner, M., Steinke, C., Lorke, M., Gies, C., Jahnke, F., & Wehling, T. (2016). Two-Dimensional Heterojunctions from Nonlocal Manipulations of the Interactions. Nano Letters.


Chicago/Turabian   Click to copy
Rösner, M., C. Steinke, M. Lorke, C. Gies, F. Jahnke, and T. Wehling. “Two-Dimensional Heterojunctions from Nonlocal Manipulations of the Interactions.” Nano letters (2016).


MLA   Click to copy
Rösner, M., et al. “Two-Dimensional Heterojunctions from Nonlocal Manipulations of the Interactions.” Nano Letters, 2016.


BibTeX   Click to copy

@article{m2016a,
  title = {Two-Dimensional Heterojunctions from Nonlocal Manipulations of the Interactions.},
  year = {2016},
  journal = {Nano letters},
  author = {Rösner, M. and Steinke, C. and Lorke, M. and Gies, C. and Jahnke, F. and Wehling, T.}
}

Abstract

We propose to create lateral heterojunctions in two-dimensional materials based on nonlocal manipulations of the Coulomb interaction using structured dielectric environments. By means of ab initio calculations for MoS2 as well as generic semiconductor models, we show that the Coulomb interaction-induced self-energy corrections in real space are sufficiently nonlocal to be manipulated externally, but still local enough to induce spatially sharp interfaces within a single homogeneous monolayer to form heterojunctions. We find a type-II heterojunction band scheme promoted by a laterally structured dielectric environment, which exhibits a sharp band gap crossover within less than 5 unit cells.





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