Journal article
J. Liu, S. Ateş, M. Lorke, J. Mørk, P. Lodahl, S. Stobbe
2013
2013
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APA
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Liu, J., Ateş, S., Lorke, M., Mørk, J., Lodahl, P., & Stobbe, S. (2013). Influence of multi-electronic states on few-quantum-dot nanolasers.
Chicago/Turabian
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Liu, J., S. Ateş, M. Lorke, J. Mørk, P. Lodahl, and S. Stobbe. “Influence of Multi-Electronic States on Few-Quantum-Dot Nanolasers” (2013).
MLA
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Liu, J., et al. Influence of Multi-Electronic States on Few-Quantum-Dot Nanolasers. 2013.
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@article{j2013a,
title = {Influence of multi-electronic states on few-quantum-dot nanolasers},
year = {2013},
author = {Liu, J. and Ateş, S. and Lorke, M. and Mørk, J. and Lodahl, P. and Stobbe, S.}
}
Abstract
We present an experimental and theoretical study on the gain mechanism in a photonic-crystal-cavity nanolaser with embedded quantum dots. From time-resolved measurements at low excitation power we find that four excitons are coupled to the cavity. At high excitation power we observe a smooth low-threshold transition from spontaneous emission to lasing. Before lasing emission sets in, however, the excitons are observed to saturate, and the gain required for lasing originates rather from multi-electronic transitions, which give rise to a broad emission background. We compare the experiment to a model of quantum-dot microcavity lasers and find that the number of emitters feeding the cavity must greatly exceed four, which confirms that the gain is provided by multi-electronic states. Our results are consistent with theoretical predictions.
