Journal article
K. Schuh, F. Jahnke, M. Lorke
2011
2011
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APA
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Schuh, K., Jahnke, F., & Lorke, M. (2011). Rapid adiabatic passage in quantum dots: Influence of scattering and dephasing.
Chicago/Turabian
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Schuh, K., F. Jahnke, and M. Lorke. “Rapid Adiabatic Passage in Quantum Dots: Influence of Scattering and Dephasing” (2011).
MLA
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Schuh, K., et al. Rapid Adiabatic Passage in Quantum Dots: Influence of Scattering and Dephasing. 2011.
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@article{k2011a,
title = {Rapid adiabatic passage in quantum dots: Influence of scattering and dephasing},
year = {2011},
author = {Schuh, K. and Jahnke, F. and Lorke, M.}
}
Abstract
Theoretical investigations for the realization of population inversion of semiconductor quantum dot ground-state transitions by means of adiabatic passage with chirped optical pulses are presented. While the inversion due to Rabi oscillations depends sensitively on the resonance condition, the pulse area, as well as on the absence of carrier scattering and dephasing, we find that adiabatic passage is surprisingly insensitive to the excitation conditions and carrier scattering effects. Quantum kinetic models for the interaction of quantum-dot carriers with longitudinal optical phonons are used to describe carrier scattering and dephasing in the corresponding simulations and allow to quantify the conditions to simultaneously invert an ensamble of quantum dots.
