Journal article
K. Schuh, J. Seebeck, M. Lorke, F. Jahnke
2009
2009
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DOI
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APA
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Schuh, K., Seebeck, J., Lorke, M., & Jahnke, F. (2009). Rabi oscillations in semiconductor quantum dots revisited: Influence of LO-phonon collisions.
Chicago/Turabian
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Schuh, K., J. Seebeck, M. Lorke, and F. Jahnke. “Rabi Oscillations in Semiconductor Quantum Dots Revisited: Influence of LO-Phonon Collisions” (2009).
MLA
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Schuh, K., et al. Rabi Oscillations in Semiconductor Quantum Dots Revisited: Influence of LO-Phonon Collisions. 2009.
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@article{k2009a,
title = {Rabi oscillations in semiconductor quantum dots revisited: Influence of LO-phonon collisions},
year = {2009},
author = {Schuh, K. and Seebeck, J. and Lorke, M. and Jahnke, F.}
}
Abstract
Coherence properties of semiconductor quantum dots are of central importance for a variety of applications. Previous studies of decoherence in these systems mainly focused on the interaction with LA phonons, only giving rise to dephasing. In contrast, the interaction with LO phonons additionally causes carrier scattering. To show the importance of the combined influence of dephasing and carrier scattering, we revisit the case of Rabi oscillations in semiconductor quantum dots using a quantum-kinetic treatment of the carrier-LO-phonon interaction.
