Journal article
M. Lorke, J. Seebeck, T. R. Nielsen, P. Gartner, F. Jahnke
2006
2006
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APA
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Lorke, M., Seebeck, J., Nielsen, T. R., Gartner, P., & Jahnke, F. (2006). Excitation dependence of the homogeneous linewidths in quantum dots.
Chicago/Turabian
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Lorke, M., J. Seebeck, T. R. Nielsen, P. Gartner, and F. Jahnke. “Excitation Dependence of the Homogeneous Linewidths in Quantum Dots” (2006).
MLA
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Lorke, M., et al. Excitation Dependence of the Homogeneous Linewidths in Quantum Dots. 2006.
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@article{m2006a,
title = {Excitation dependence of the homogeneous linewidths in quantum dots},
year = {2006},
author = {Lorke, M. and Seebeck, J. and Nielsen, T. R. and Gartner, P. and Jahnke, F.}
}
Abstract
A microscopic theory is used to study the optical properties of semiconductor quantum dots. The dephasing of a coherent excitation and line-shifts of the interband transitions due to carrier-carrier Coulomb interaction and carrier-phonon interaction are determined from a quantum kinetic treatment of correlation processes. In this work we are investigating the density dependence of the homogeneous linewidth of both quantum dot and wetting layer resonances as a function of the carrier density in the system. It was discussed previously in bulk and quantum well systems the linewidth depends on the excitation density via a power law. We find a similar density dependence of the dephasing also for the ground state interband transitions in quantum dot systems.
