Journal article
M. Lorke, W. Chow, T. R. Nielsen, J. Seebeck, P. Gartner, F. Jahnke
2006
2006
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APA
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Lorke, M., Chow, W., Nielsen, T. R., Seebeck, J., Gartner, P., & Jahnke, F. (2006). Anomaly in the excitation dependence of the optical gain of semiconductor quantum dots.
Chicago/Turabian
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Lorke, M., W. Chow, T. R. Nielsen, J. Seebeck, P. Gartner, and F. Jahnke. “Anomaly in the Excitation Dependence of the Optical Gain of Semiconductor Quantum Dots” (2006).
MLA
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Lorke, M., et al. Anomaly in the Excitation Dependence of the Optical Gain of Semiconductor Quantum Dots. 2006.
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@article{m2006a,
title = {Anomaly in the excitation dependence of the optical gain of semiconductor quantum dots},
year = {2006},
author = {Lorke, M. and Chow, W. and Nielsen, T. R. and Seebeck, J. and Gartner, P. and Jahnke, F.}
}
Abstract
Optical gain behavior of semiconductor quantum dots is studied within a quantum-kinetic theory, with carrier-carrier and carrier-phonon scattering treated using renormalized quasiparticle states. For inhomogeneously broadened samples, we found the excitation dependence of gain to be basically similar to quantum-well and bulk systems. However, for a high quality sample, our theory predicts the possibility of a decreasing peak gain with increasing carrier density. This anomaly can be attributed to the delicate balance between state filling and dephasing.
