Coulomb scattering in nitride-based self-assembled quantum dot systems


Journal article


T. R. Nielsen, P. Gartner, M. Lorke, J. Seebeck, F. Jahnke
2005

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APA   Click to copy
Nielsen, T. R., Gartner, P., Lorke, M., Seebeck, J., & Jahnke, F. (2005). Coulomb scattering in nitride-based self-assembled quantum dot systems.


Chicago/Turabian   Click to copy
Nielsen, T. R., P. Gartner, M. Lorke, J. Seebeck, and F. Jahnke. “Coulomb Scattering in Nitride-Based Self-Assembled Quantum Dot Systems” (2005).


MLA   Click to copy
Nielsen, T. R., et al. Coulomb Scattering in Nitride-Based Self-Assembled Quantum Dot Systems. 2005.


BibTeX   Click to copy

@article{t2005a,
  title = {Coulomb scattering in nitride-based self-assembled quantum dot systems},
  year = {2005},
  author = {Nielsen, T. R. and Gartner, P. and Lorke, M. and Seebeck, J. and Jahnke, F.}
}

Abstract

We study the carrier capture and relaxation due to Coulomb scattering in group-III nitride quantum dots on the basis of population kinetics. For the states involved in the scattering processes the combined influence of the quantum-confined Stark effect and many-body renormalizations is taken into account. The charge separation induced by the built-in field has important consequences on the capture and relaxation rates. It is shown that its main effect comes through the renormalization of the energies of the states involved in the collisions and leads to an increase in the scattering efficency.





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